Makes breakthroughs in key process technologies such as low-loss optical waveguides, high-quality germanium epitaxy, high-precision ion implantation, double-layer aluminum interconnection, and end-face coupling, and establish the first full-process 90 nm silicon photonics integration technology in China.

Establishes the 180 nm passive, 180 nm active, and 90 nm active series of silicon photonics integration technologies and device PDKs.